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Items where Division is "Pusat Pengajian Sains Fizik (School of Physics) > Conference or Workshop Item" and Year is 2015
Number of items: 15. AAli, Ahmad Hadi and Shuhaimi, Ahmad and Hassan, Zainuriah (2015) Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). Alvin, Y. S. M. and Zainal, N. and Hassan, Z. (2015) Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). Amin, NurFahana Mohd and Lee, Zhi Yin and Fong, Chee Yong and Ng, Sha Shiong (2015) Growth and Characterization of Mg Doped Gallium Nitride (GaN) Thin Films via Sol-Gel Spin Coating Technique. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). Ariff, A. and Zainal,, N. and Hassan,, Z. and Ibrahim, K. (2015) Optimization of Post-Annealing Treatment Conditions on GaN Layer Grown on m-Plane Sapphire Substrate by Electron Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). Azimah, E. and Zainal, N. and Shuhaimi, A. and Egawa, T. and Akimov, A. V. and Kent, A. J. (2015) Optical Investigations on In0.11Ga0.89N based LEDs Grown on Si (111) Substrate with Different Superlattices Stack Layer Structure. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). FFatihah, N. and Zainal, N. and Hassan, Z. (2015) Properties of p-GaN Layer on Different Nitride Surfaces. In: Meeting of Malaysia Nitrides Research Group. Fikri, Z. M. and Zainal,, N. and Ibrahim, K. (2015) Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). MMohammad, Sabah M. and Hassan, Z. and Ahmed, Naser M. (2015) Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method. In: Meeting of Malaysia Nitrides Research Group. OOoi, P. K. and Ng, S. S. and Abdullah, M. J. (2015) Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). Osman, Siti Aisyah and Lee, Zhi Yin and Fong, Chee Yong and Ng, Sha Shiong (2015) Effects of Substrate Temperature on the Properties of Indium Nitride Thin Films Grown on Flexible Prepared by Reactive Sputtering Method. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). RRadzali, R. and Hassan, Z. and Zainal, N. and Yam, F.K. (2015) Properties of Porous InGaNbased Hydrogen Gas Sensor. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). SSamsudin, M. E. A. and Zainal, N. and Hassan, Z. (2015) Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). TTaib, M. lkram Md and Zainal, N. and Hassan, Z. (2015) Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). Tneh, S.S. and Beh, K.P. and Yam, F.K. and Ng, S.W. and Lee, S.C. and Ng, S.S. and Hassan, Z. (2015) Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). WWaheeda, S. N. and Zainal, N. and Hassan, Z. and Powell, R. E. L. and Akimov, A. V. and Kent, A. J. (2015) Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). |