Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique

Tneh, S.S. and Beh, K.P. and Yam, F.K. and Ng, S.W. and Lee, S.C. and Ng, S.S. and Hassan, Z. (2015) Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique. In: Meeting of Malaysia Nitrides Research Group.

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Abstract

In this paper, we present a simple growth setup which is able to grow indium gallium oxynitride (lnGaON). This setup only involves furnace, ammonia gas, as well as gallium (Ga) and indium (In) sources. The characterization results heavily implied the growth of lnGaON on silicon (Si) substrate. Firstly energy-dispersive x-rays (EDX) measurement confirmed the presence of In, Ga, 0 and N. Despite 0 being significant, Fourier transform infra-red (FTIR) spectroscopy and x-rays diffraction (XRD) results revealed the absence of metal oxides signals. Further analysis from both measurements showed the sample contained high In content, with crystalline structure resembled that of lnGaN, and was of (001) dominance.

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics > QC1 Physics (General)
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Conference or Workshop Item
Depositing User: Mr Aizat Asmawi Abdul Rahim
Date Deposited: 24 Feb 2021 06:54
Last Modified: 24 Feb 2021 06:54
URI: http://eprints.usm.my/id/eprint/48435

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