Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method

Mohammad, Sabah M. and Hassan, Z. and Ahmed, Naser M. (2015) Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method. In: Meeting of Malaysia Nitrides Research Group.

[img]
Preview
PDF
Download (242kB) | Preview

Abstract

Wide band gap semiconductors like GaN and ZnO have high electron mobility and wide band gap energy. Zinc oxide (ZnO)nanorod arrays are grown on a seed-layer ZnO/GaN l sapphire substrate using a wet chemical bath deposition method. Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnOnanorods on a GaN substrate. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) measurements were used to examine the morphology, phase growth orientation and the structure of the ZnOnanorods and the GaN thin film. Optical property of the as-grown ZnOnanorodsand the GaN thin film was analyzed by room temperature photoluminescence measurements. The synthesis of vertically well-aligned nZnOnanorods on p-GaN film with large aspect ratio, high optical quality, and high density can be very useful for fabricating nanoelectronic and nano-optical devices.

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics > QC1-999 Physics
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Conference or Workshop Item
Depositing User: Mr Aizat Asmawi Abdul Rahim
Date Deposited: 31 Mar 2021 04:12
Last Modified: 31 Mar 2021 04:12
URI: http://eprints.usm.my/id/eprint/48732

Actions (login required)

View Item View Item
Share