Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator

Alvin, Y. S. M. and Zainal, N. and Hassan, Z. (2015) Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).

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Abstract

In this work, the growth of scandium nitride (SeN) on gallium arsenide (GaAs) substrate is demonstrated using electron beam (e-beam) evaporator with successive annealing in ammonia (NHJ) ambient. As observed in field effect scanning electron microscopy (FE-SEM), the surface morphology of the SeN layer was started to transform from rice grains-like structure to rock salt grains-like structure by increasing the temperature from 750 oc to 900 °C. The rock salt grains-like structure is similar to high quality SeN, as reported in literature. However, the surface degraded with the presence of voids at 980 °C. The existence of SeN bond was confirmed by x-ray photospectroscopy (XPS) measurement. The photoluminescence (PL) of near-to-band-edge SeN peak was observed in all samples. Furthermore, the SeN peaks in Raman spectrum were obvious when the sample was annealed above 850 °C. Based on the evidences, the growth of SeN using the above techniques was successful, with the annealing temperature above 850 °C.

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics > QC1-999 Physics
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Conference or Workshop Item
Depositing User: Mr Aizat Asmawi Abdul Rahim
Date Deposited: 02 Apr 2021 01:41
Last Modified: 02 Apr 2021 01:41
URI: http://eprints.usm.my/id/eprint/48767

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