Investigation of simultaneous thermal oxidation and nitridation of sputtered zirconium on silicon and silicon carbide in nitrous oxide gas environment

Wong, Yew Hoong (2012) Investigation of simultaneous thermal oxidation and nitridation of sputtered zirconium on silicon and silicon carbide in nitrous oxide gas environment. PhD thesis, Universiti Sains Malaysia.

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Abstract

Thin film Zr on Si and SiC were formed by sputtering. The films then underwent simultaneous oxidation and nitridation in N2O. The effects of oxidation/nitridation durations (5 20 min) and temperatures (500 1100oC) on the sputtered Zr/Si system and the effects of oxidation/nitridation temperatures (400 900oC) and the concentrations of N2O (10 100%) to the characteristics of the sputtered Zr/SiC system were studied. Structural, chemical, and electrical properties of the samples were examined. X-ray photoelectron spectroscopy results showed that ZrO2 thin film was formed with an interfacial layer (IL) of Zr-silicate oxynitride (ZrSiON) on Si, while Zr-oxynitride (ZrON) thin film was formed with an IL of ZrSiON and carbon nitride on SiC.

Item Type: Thesis (PhD)
Subjects: T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
Divisions: Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering) > Thesis
Depositing User: ASM Ab Shukor Mustapa
Date Deposited: 09 Jul 2019 06:50
Last Modified: 09 Jul 2019 06:50
URI: http://eprints.usm.my/id/eprint/44927

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