Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film

Abidin, Noor Rehan Zainal (2011) Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film. Masters thesis, Universiti Sains Malaysia.

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Abstract

Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a potential to overcome the tunneling leakage current problem since it has a high dielectric current (k=25) and good thermal stability on silicon (Si) substrate. The main objective of this work is to produce ZrO2 thin film with good properties and suitable for get dielectric application. ZrO2 thin film has been produced by anodizing zirconium (Zr) thin film sputtered on n-type Si substrate.

Item Type:	Thesis (Masters)
Subjects:	T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
Divisions:	Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering) > Thesis
Depositing User:	ASM Ab Shukor Mustapa
Date Deposited:	01 Oct 2018 01:32
Last Modified:	12 Apr 2019 05:26
URI:	http://eprints.usm.my/id/eprint/42216

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