Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization

Yusof, Ashaari (2008) Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization. Masters thesis, Universiti Sains Malaysia.

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Abstract

Dalam kajian ini, struktur get HEMT dengan gatelength bersaiz 200 nm dan berprofil cendawan telah direkabentuk, difabrikasi dan dicirikan. In this research study, 200 nm gatelength HEMT gate structures with mushroom-shaped profile have been designed, fabricated and characterized.

Item Type: Thesis (Masters)
Additional Information: [TK7871.95. A819 2008 f rb].
Subjects: T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK7800-8360 Electronics
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User: MHAH Hazlee Abdul Halil
Date Deposited: 04 Jun 2009 04:10
Last Modified: 31 Jan 2020 07:32
URI: http://eprints.usm.my/id/eprint/10407

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