Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization [TK7871.95. A819 2008 f rb].

Yusof, Ashaari (2008) Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization [TK7871.95. A819 2008 f rb]. Masters thesis, Universiti Sains Malaysia.

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    Abstract

    Dalam kajian ini, struktur get HEMT dengan gatelength bersaiz 200 nm dan berprofil cendawan telah direkabentuk, difabrikasi dan dicirikan. In this research study, 200 nm gatelength HEMT gate structures with mushroom-shaped profile have been designed, fabricated and characterized.

    Item Type: Thesis (Masters)
    Subjects: T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK7800-8360 Electronics
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: MHAH Hazlee Abdul Halil
    Date Deposited: 04 Jun 2009 12:10
    Last Modified: 13 Jul 2013 12:24
    URI: http://eprints.usm.my/id/eprint/10407

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