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Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization [TK7871.95. A819 2008 f rb].

Yusof, Ashaari (2008) Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization [TK7871.95. A819 2008 f rb]. Masters thesis, Universiti Sains Malaysia.

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Abstract

Dalam kajian ini, struktur get HEMT dengan gatelength bersaiz 200 nm dan berprofil cendawan telah direkabentuk, difabrikasi dan dicirikan. In this research study, 200 nm gatelength HEMT gate structures with mushroom-shaped profile have been designed, fabricated and characterized.

Item Type:Thesis (Masters)
Subjects:T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK7800-8360 Electronics
ID Code:10407
Deposited By:MHAH Hazlee Abdul Halil
Deposited On:04 Jun 2009 12:10
Last Modified:04 Jun 2009 12:10

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