Items where Author is "Zainal, N."

Samsudin, M. E. A. and Yusuf, Y. and Zollner, C. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2020) Effect Of Nucleation Time With TMAl Preflow Assistance On Reducing Dislocation Density Of Aln Layer For. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

Samsudin, M. E. A. and Yusuf, Y. and Zollner, C. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2020) Effect Of Nucleation Time With Tmal Preflow Assistance On Reducing Dislocation Density Of Aln Layer For AlGaN-Based UVC LED. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020).

Zainal, N. and Alhassan, Abdullah I. and Nakamura, S. and Denbaars, S. P. and Speck, J. S. (2019) Characteristics Of InGaN Based Red Led Epiwafer. In: International Conference On Semiconductor Materials Technology.

Alias, E. A. and Samsudin, M. E. A. and Zainal, N. and Iza, M. and Hassan, Abdullah I. and Denbaars, S. P. and Speck, J. S. and Nakamura, S. (2019) Comparison Between Vertical-Stand Packaging And Planar-Mounted Packaging For Gan On Gan Led. In: International Conference On Semiconductor Materials Technology.

Ahmad, M. A. and Hamzah, N. A. and Asri1, R. I. M. and Zainal, N. and Hassan, Z. (2019) Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss. In: International Conference On Semiconductor Materials Technology.

Samsudin, M. E. A. and Alias, E. A. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2019) Efficiency Droop Of InGaN/GaN Led With Different Indium Composition. In: International Conference On Semiconductor Materials Technology.

Ibrahim, N. and Ikram Md Taib, M. and Waheeda, S. N. and Alias, E. A. and Zainal, N. (2019) Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN. In: International Conference On Semiconductor Materials Technology.

Taib, M. l. Md and Alhassan, A. I. and Muhammed, M. M. and Ajia, I. A. and Zainal, N. (2017) Effect of structural design on lnGaN based green LEOs with AIGaN cap layer. In: 4th Meeting of Malaysia Nitrides Research Group (MNRG 2017).

Ariff, A. and Hassan, Z. and Zainal, N. (2017) Potential of polycrystalline GaN deposited by electron beam evaporator for metal-semiconductor-metal {MSM) photodetector device. In: 4th Meeting of Malaysia Nitrides Research Group (MNRG 2017).

Yusof, A. S. and Hassan, Z. and Zainal, N. (2017) Fabrication and Characterization of Cu-doped ZnO Films using rf Reactive Magnetron Sputtering. In: 6th International Conference on Solid State Science and Technology (ICSSST) 2017 & Workshop and Advanced Materials Technology : Growth and characterization.

Ariff, F. A. and Zainal, N. and Hassan, Z. (2016) Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016).

Samsudin, F. M. E. A. and Zainal, N. and Hassan', Z. (2016) Review on UV-LEDs: State of the Art and Challenges Ahead. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016).

Samsudin, M. E. A. and Zainal, N. and Hassan, Z. (2015) Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).

Azimah, E. and Zainal, N. and Shuhaimi, A. and Egawa, T. and Akimov, A. V. and Kent, A. J. (2015) Optical Investigations on In0.11Ga0.89N based LEDs Grown on Si (111) Substrate with Different Superlattices Stack Layer Structure. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).

Taib, M. lkram Md and Zainal, N. and Hassan, Z. (2015) Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).

Waheeda, S. N. and Zainal, N. and Hassan, Z. and Powell, R. E. L. and Akimov, A. V. and Kent, A. J. (2015) Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).

Alvin, Y. S. M. and Zainal, N. and Hassan, Z. (2015) Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).

Radzali, R. and Hassan, Z. and Zainal, N. and Yam, F.K. (2015) Properties of Porous InGaNbased Hydrogen Gas Sensor. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).

Fatihah, N. and Zainal, N. and Hassan, Z. (2015) Properties of p-GaN Layer on Different Nitride Surfaces. In: Meeting of Malaysia Nitrides Research Group.

Hassan, Z. and Zainal, N. and Hashim, M. R. and Abu Hassan, H. (2005) Simulation of High Performance Quantum Well GaN-based LED. In: SPIE International Symposium Optoelectronics 2005, 22 - 27 January 2005, San Jose, California, USA.