Alias, Ezzah Azimah (2024) Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate. PhD thesis, Universiti Sains Malaysia.
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Abstract
This project attempts to improve the performance of InGaN LEDs grown on GaN substrates. To achieve this goal, three frameworks were proposed. Firstly, by introducing GaN cap layer in multiquantum wells (MQWs). Secondly, by roughening backside (N-face) of GaN substrate using new etching solution and annealing the substrate before roughening. Thirdly, by roughening GaN substrate prior to LED growth.
| Item Type: | Thesis (PhD) |
|---|---|
| Subjects: | Q Science > QD Chemistry > QD1-999 Chemistry |
| Divisions: | Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Thesis |
| Depositing User: | Mr Aizat Asmawi Abdul Rahim |
| Date Deposited: | 14 Oct 2025 07:21 |
| Last Modified: | 14 Oct 2025 07:21 |
| URI: | http://eprints.usm.my/id/eprint/62954 |
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