Ahmed Ali, Amal Mohamed
(2022)
Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range.
PhD thesis, Perpustakaan Hamzah Sendut.
Abstract
Real time dosimetry is a major challenge in medical, industrial and education
fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect
transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is
being developed in a different study to measure the dose delivered to the tissue layers.
This thesis will discuss the development of a new type of radiation detector based on
the characteristics of different metal oxide materials, and a new model of radiation
detector, known as extended gate field-effect transistor (EGFET) and the optimization
of the operating conditions.
Actions (login required)
 |
View Item |
