Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

Kamarulzaman, Azharul Ariff (2017) Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector. PhD thesis, Universiti Sains Malaysia.

Preview

PDF Download (580kB) | Preview

Abstract

This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment.

Item Type:	Thesis (PhD)
Subjects:	Q Science > QC Physics > QC501-766 Electricity and magnetism
Divisions:	Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Thesis
Depositing User:	Mr Aizat Asmawi Abdul Rahim
Date Deposited:	27 Oct 2020 07:47
Last Modified:	27 Oct 2020 07:47
URI:	http://eprints.usm.my/id/eprint/47791

Actions (login required)

View Item