Influence of Al doping on random lasing in ZnO nanorods

Fadzliana, N. and Samsuri, S.A.M. and Chan, S.Y. and Hsu, H.C. and Maryam, W. (2020) Influence of Al doping on random lasing in ZnO nanorods. Optics and Laser Technology, 124 (106004). pp. 1-5. ISSN 1879-2545 (Submitted)

[img]
Preview
PDF - Accepted Version
Download (1MB) | Preview

Abstract

Random lasing was demonstrated from aluminum doped ZnO nanorods fabricated on ITO coated glass substrates using simple chemical deposition technique. Different Aluminum (Al) doping parameters were explored in an attempt to realize low threshold ZnO random lasers. Results confirm threshold was strongly dependent on doping concentration and suggestive of resonant coupling with Al in lowering the threshold by 2 orders of magnitude when compared to undoped ZnO nanorods. Lowest threshold was obtained from ZnO nanorods doped with 10 mM of aluminum, suggesting best doping concentration for ZnO random lasers formed by nanorod array. Results further indicate possibility of controlling random lasing properties by adjusting the doping concentration.

Item Type: Article
Subjects: Q Science > QD Chemistry > QD1-999 Chemistry
T Technology > TN Mining Engineering. Metallurgy > TN600-799 Metallurgy
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Article
Zoom Profil Pakar (Expert Profile) > Wan Maryam Wan Ahmad Kamil (School of Physics)
Depositing User: Administrator Automasi
Date Deposited: 31 Jan 2020 03:16
Last Modified: 31 Jan 2020 04:09
URI: http://eprints.usm.my/id/eprint/46061

Actions (login required)

View Item View Item
Share