Development Of Tetragonal Zirconia Thin Film For Semiconductor Application

Chan, Pooi Quan (2011) Development Of Tetragonal Zirconia Thin Film For Semiconductor Application. Masters thesis, Universiti Sains Malaysia.

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Abstract

In this work, the YSZ and Nb-YSZ film were produced by using chemical solution deposition (CSD) technique via dip coating. The films were deposited on two different substrates (silica glass and Si wafer). Various parameters were conducted in this study including numbers of coatings, concentration of precursor solution, annealing temperature and heating rate to obtain the optimum condition for coating of the film. The precursor solution was prepared with the molar ratio of ZrOCl2·8H2O to YNO3·6H2O at 95:5 and mixed with absolute ethanol as a solvent.

Item Type:	Thesis (Masters)
Subjects:	T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
Divisions:	Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering) > Thesis
Depositing User:	ASM Ab Shukor Mustapa
Date Deposited:	07 Feb 2019 06:46
Last Modified:	12 Apr 2019 05:26
URI:	http://eprints.usm.my/id/eprint/43232

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