Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon

Yaakob, Suriani Haji (2011) Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon. Masters thesis, Universiti Sains Malaysia.

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Abstract

Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS were studied. These properties were characterized by Scanning Electron Microscopy (SEM), gravimetric method, Atomic Force Microscopy (AFM) and Current-Voltage (I-V) characteristics. The increment in current density has changed the morphology of the PS from interconnected network to columnar with side branching. However, with the increase in the etching time and HF concentration, this disappeared to give smooth side wall pores.

Item Type:	Thesis (Masters)
Subjects:	Q Science > QD Chemistry > QD1-999 Chemistry
Divisions:	Pusat Pengajian Sains Kimia (School of Chemistry) > Thesis
Depositing User:	ASM Ab Shukor Mustapa
Date Deposited:	29 Oct 2018 01:10
Last Modified:	12 Apr 2019 05:26
URI:	http://eprints.usm.my/id/eprint/42764

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