Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography

Abdullah, Ahmad Makarimi (2012) Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography. Masters thesis, Universiti Sains Malaysia.

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Abstract

Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), nitric acid (HNO3) and Di-Ionize water (DIW) and diluted hydrofluoric acid (HF) to remove the organic, inorganic contaminants and native oxide from the wafer surface. A non-contact AFM mode was chosen to perform the AFM lithography process on pre-cleaned SOI wafer. The SiNWT structure was designed by using raster programming. A conductive AFM tip (Cr/Pt cantilever tip) was used to fabricate SiNWT patterns on the SOI surface based on pre-designed structures.

Item Type:	Thesis (Masters)
Subjects:	T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
Divisions:	Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering) > Article
Depositing User:	ASM Ab Shukor Mustapa
Date Deposited:	16 Aug 2018 07:04
Last Modified:	16 Aug 2018 07:04
URI:	http://eprints.usm.my/id/eprint/41348

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