High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

Al-Hardan, Naif H. and Abdul Hamid, Muhammad Azmi and M. Ahmed, Naser and Jalar, Azman and Shamsudin, Roslinda and Kamil Othman, Norinsan and Lim, Kar Keng and Chiu, Weesiong and N. Al-Rawi, Hamzah (2016) High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors, 16 (6). pp. 1-12. ISSN 1424-8220

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Abstract

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

Item Type:	Article
Subjects:	Q Science > QC Physics > QC1-999 Physics T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Divisions:	Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraaan Elektrik & Elektronik (School of Electrical & Electronic Engineering) > Article Pusat Pengajian Sains Fizik (School of Physics) > Article
Depositing User:	Mr Noorazilan Noordin
Date Deposited:	09 Oct 2017 04:32
Last Modified:	09 Oct 2017 04:32
URI:	http://eprints.usm.my/id/eprint/36977

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