Jawad, Mohammed J.
(2015)
Study Of Ge And Geo2 Low Dimensional Structures
Synthesized By Electrochemical Deposition For
Sensing Applications.
PhD thesis, Universiti Sains Malaysia.
Abstract
Projek ini mencadangkan satu cara alternatif untuk menyediakan struktur
mikro-Ge dan GeO2 tanpa pemangkin dan berkos rendah dengan menggunakan
teknik pemendapan elektrokimia (ECD). Pertama sekali, struktur mikro Ge telah
disintesis di atas substrat Si dengan mengenakan ketumpatan arus yang berbeza dari
2 ke 7.5 mA/cm2. Bentuk morfologi Ge yang dihasilkan menunjukkan pergantungan
yang tinggi terhadap ketumpatan arus. Purata saiz kristal dan terikan telah meningkat
dengan peningkatan ketumpatan arus. Kesan jangka masa yang berbeza (0.5, 1, 1.5
dan 2 h) ke atas ciri morfologi, struktur dan optik rod mikro kubus Ge yang
ditumbuhkan di atas Si telah dikaji. Diperhatikan bahawa ketebalan lapisan Ge
meningkat sehingga 3 μm dalam tempoh 2 jam. Perbandingan juga telah dilakukan
ke atas struktur mikro Ge yang disintesiskan di atas substrat silikon berlian (PS) dan
Si. Hasil kajian menunjukkan bahawa terikan elastik filem Ge pada PS adalah lebih
rendah daripada filem Ge pada substrat Si.
The project proposed an alternative way for preparing Ge and GeO2
nanostructures without catalyst and low cost by using electrochemical deposition
(ECD) technique. Firstly Ge microstructures were synthesized on Si at different
applied current densities which were varied from 2 to 7.5 mA/cm2. The
morphologies of Ge showed strong dependence on the applied current density. The
average crystal size and the strain were increased with increasing of the current
density. The effect of different deposition durations of 0.5, 1, 1.5 and 2 h on the
morphological, structural and optical properties of Ge cubic microrods growth on Si
was investigated. It was observed that the thickness of Ge layer increased up to 3 μm
within duration of 2 h. A comparison between Ge microstructures synthesized on
porous silicon (PS) and Si substrates was performed. The results showed that the
elastic strain of Ge films grown on PS was lower than that grown on Si substrate.
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