Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates

Mohmad Zaini, Siti Nurul Waheeda (2015) Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates. Masters thesis, Universiti Sains Malaysia.

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Abstract

Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan. In general, this thesis presents the study of GaN layer grown on different cubic substrates. In the first part of this work, the properties of GaN film grown on (100)- oriented cubic Si substrate was investigated. Improvement in the properties of the GaN layer are observed by means of thermal annealing treatment.

Item Type:	Thesis (Masters)
Subjects:	Q Science > QC Physics > QC1 Physics (General)
Divisions:	Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User:	Mr Firdaus Mohamad
Date Deposited:	04 Jan 2017 03:53
Last Modified:	12 Apr 2019 05:25
URI:	http://eprints.usm.my/id/eprint/31387

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