Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process

Cheah , Sook Fong (2015) Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process. Masters thesis, Universiti Sains Malaysia.

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Abstract

Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia (PEC) telah dilaporkan. An investigation into the fabrication of porous GaN thin films via photoelectrochemical (PEC) process was reported. The main objective for this research work is to investigate the morphological and optical properties of fabricated porous GaN thin films.

Item Type: Thesis (Masters)
Subjects: Q Science > QC Physics > QC1 Physics (General)
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User: Mr Firdaus Mohamad
Date Deposited: 06 Jun 2016 07:54
Last Modified: 12 Apr 2019 05:25
URI: http://eprints.usm.my/id/eprint/30084

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