Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

L, S Chuah and Hassan, Z. and Abu Hassan, H (2007) Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.

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Abstract

The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics > QC1 Physics (General)
Divisions:	Pusat Pengajian Sains Fizik (School of Physics)
Depositing User:	Mr Erwan Roslan
Date Deposited:	20 Nov 2009 01:56
Last Modified:	13 Jul 2013 05:44
URI:	http://eprints.usm.my/id/eprint/14829

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