Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.

Jo, Lene Tan and Kuan, Yew Cheong and Rusli, Rusli (2007) Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan.

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Abstract

The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3].

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
Divisions:	Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering)
Depositing User:	Mr Erwan Roslan
Date Deposited:	29 Oct 2009 03:38
Last Modified:	13 Jul 2013 05:21
URI:	http://eprints.usm.my/id/eprint/13614

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