Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN

Hassan, Z. and Yam, F. K. and Lee, Y. C. and Othman, S. (2005) Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN. In: Light-Emitting Diodes: Research, Manufacturing, and Applications IX.

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Abstract

In this work, we investigate the thermal stability and surface morphology of Ti metal contact on unintentionally doped n-type aluminum gallium nitride (AIGaN). Different annealing temperatures (400C - 800C) and durations (1-30 minutes) are investigated, as thermally stable metal-semiconductor contacts are essential for high quality devices. Cryogenic quenching after heat treatment is also performed to determine the effects of this treatment on the characteristics of the contacts. Specific contact resistivity, Pc (SCR) determined using transmission line method (TLM) and scanning electron microscopy (SEM) measurements are carried out to be as-deposited, annealed (A), and annealed-and-cryogenically (A=C) treated contacts where the electrical behavior and the surface morphology of eahc of these conditions are compared.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	n-AIGaN, ohmic contact, cryogenic treatment, transmission line method
Subjects:	Q Science > QC Physics
Divisions:	Pusat Pengajian Sains Fizik (School of Physics)
Depositing User:	ARKM Al Rashid Automasi
Date Deposited:	26 May 2008 01:17
Last Modified:	13 Nov 2023 21:56
URI:	http://eprints.usm.my/id/eprint/133

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