Y, C.Lee and Z., Hassan and F., K. Yam and Abdullah, M. J. and Ibrahim, K. (2000) A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. Working Paper. Universiti Sains Malaysia .
Full text not available from this repository.Abstract
High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.
| Item Type: | Monograph (Working Paper) |
|---|---|
| Subjects: | Q Science > QC Physics > QC1-999 Physics |
| Divisions: | Pusat Pengajian Sains Fizik (School of Physics) |
| Depositing User: | Mr Erwan Roslan |
| Date Deposited: | 30 Jun 2009 01:14 |
| Last Modified: | 14 Sep 2017 04:29 |
| URI: | http://eprints.usm.my/id/eprint/10768 |
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