Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].

Ali Al-Obaidi, Nihad Khalaf (2008) Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb]. PhD thesis, Universiti Sains Malaysia.

[img]
Preview
PDF
Download (256Kb) | Preview

    Abstract

    Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and their optical properties were extensively studied. In this work, two approaches to manufacture these materials are employed.

    Item Type: Thesis (PhD)
    Subjects: T Technology > TA Engineering (General). Civil engineering (General) > TA401-492 Materials of engineering and construction. Mechanics of materials
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 12 May 2009 10:19
    Last Modified: 13 Jul 2013 12:16
    URI: http://eprints.usm.my/id/eprint/9893

    Actions (login required)

    View Item
    Share