Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].

Abstract

Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and their optical properties were extensively studied. In this work, two approaches to manufacture these materials are employed.