Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].

Ali Al-Obaidi, Nihad Khalaf (2008) Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb]. PhD thesis, Universiti Sains Malaysia.

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Abstract

Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and their optical properties were extensively studied. In this work, two approaches to manufacture these materials are employed.

Item Type:	Thesis (PhD)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) > TA401-492 Materials of engineering and construction. Mechanics of materials
Divisions:	Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User:	Mr Erwan Roslan
Date Deposited:	12 May 2009 02:19
Last Modified:	22 Mar 2017 02:23
URI:	http://eprints.usm.my/id/eprint/9893

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