Hedei, Puteri Haslinda Megat Abdul (2025) Investigation Of Gallium Oxide And Gallium Cerium Oxide Passivation Layers On Silicon And 4h–Silicon Carbide Substrates For Metal-Oxide- Semiconductor Based Devices. PhD thesis, Perpustakaan Hamzah Sendut.
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Abstract
The evolving technologies in metal-oxide-semiconductor (mos)-based devices have provoked the replacement of conventional silicon (si) by the utilization of wide band gap semiconductor, 4h-silicon carbide (sic). Another encountered issue was related to the limitation of silicon dioxide (sio2) to meet the current demand for smaller, faster and more efficient electronic devices. This has driven the search for alternative materials with higher dielectric constants (k). Therefore, this study focused on investigating gallium oxide (ga2o3) and gallium cerium oxide (gaxceyoz) films sputtered on si and 4h-sic substrates by direct current-radio frequency magnetron co-sputtering for the realization of mos devices. Initial investigation on ga2o3 films was done by varying the post-deposition annealing parameters, such as ambient (nitrogen oxygen-nitrogen (n2-o2-n2), argon, oxygen), dwelling time (30, 60, 90 and 240 min) and temperatures (400, 600, 800 and 1000℃). It was revealed that the ga2o3 film annealed in n2-o2-n2 ambient for 60 min at 800℃ demonstrated the presence of stable β-ga2o3 phase with acceptable structural, optical, morphological and electrical properties due to the incorporation of nitrogen ions into the lattice. The subsequent analysis by employing the optimized annealing parameters to comparative studies amongst ga2o3, cerium doped gallium oxide (cexgayoz) and gaxceyoz on si substrates had emphasized the significance of incorporating gallium ions into the ceo2 lattice.
| Item Type: | Thesis (PhD) |
|---|---|
| Subjects: | Q Science > QC Physics > QC1 Physics (General) |
| Divisions: | Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Thesis |
| Depositing User: | Mr Hasmizar Mansor |
| Date Deposited: | 16 Apr 2026 03:52 |
| Last Modified: | 16 Apr 2026 03:52 |
| URI: | http://eprints.usm.my/id/eprint/63922 |
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