Raif, Nur Syahirah Abdul (2017) Design And Simulation Of Power Amplifier At 10 Ghz For X-Band Radar Applications. Project Report. Universiti Sains Malaysia, Pusat Pengajian Kejuruteraan Elektrik & Elektronik. (Submitted)
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Abstract
This paper reviews a design and simulation of X-band GaAs pHEMT power amplifier. The energy that is emitted through link module at RF amplifier is more as RF amplifier is located at the end of radio transmitter which supplied RF power for the receiving antenna. Ideal power amplifier converts DC power into output signal power under the linear control of an RF input from signal generator. Power amplifier concept requires non-linear operation since linear networks cannot shift power from one frequency to another. The frequency range for X-band is between 8 to 12 GHz. RF amplifier design depends on the terminal characteristics of the transistor as represented by S-parameter. Scattering parameter (S-parameter) of the transistor provides the significant values to perform analysis such as stability, DC biasing, input return loss (
| Item Type: | Monograph (Project Report) |
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| Subjects: | T Technology T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering |
| Divisions: | Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraaan Elektrik & Elektronik (School of Electrical & Electronic Engineering) > Monograph |
| Depositing User: | Mr Mohamed Yunus Mat Yusof |
| Date Deposited: | 17 Jun 2022 07:40 |
| Last Modified: | 17 Jun 2022 07:40 |
| URI: | http://eprints.usm.my/id/eprint/52939 |
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