Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film

Hedei, Puteri Haslinda Megat Abdul and Hassan, Zainuriah and Hock, Jin Quah (2020) Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

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Abstract

In this work, the gallium oxide (Ga2O3) thin films were deposited on silicon substrate using radio frequency (RF) magnetron sputtering and these Ga2O3 thin films were subjected to post-deposition annealing in oxygen ambient at different temperatures of 400, 600, 800, and 1000℃ for 60 minutes. The structural properties of post-deposition annealed Ga2O3 thin films were characterized using grazing incidence X-ray diffraction (GIXRD). Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) were employed to attain the three-dimensional surface topographies and morphologies, respectively, for the investigated Ga2O3 thin films. In additional, elemental composition of these thin films were characterized using energy-dispersive X-ray spectroscopy and thickness of the investigated Ga2O3 thin films were estimated based on the cross-sectional FESEM images. Current-voltage characteristics of the Ga2O3 thin films subjected to different postdepositional annealing temperatures were also presented in this work.

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics > QC1-999 Physics
Divisions: Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item
Depositing User: Mr Aizat Asmawi Abdul Rahim
Date Deposited: 04 May 2021 03:09
Last Modified: 04 May 2021 03:09
URI: http://eprints.usm.my/id/eprint/49088

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