Development of silicon planar P-I-N photodiode

N V Visvanathan, P Susthitha Menon and Shaari, Sahbudin (2004) Development of silicon planar P-I-N photodiode. In: The 4th Annual Seminar of National Science Fellowship NSF 2004 Proceedings. Penerbit Universiti Sains Malaysia, Pulau Pinang, Malaysia, pp. 466-471.

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Optical receivers are used to detect optical power and to extract the information that is being transmitted. The incident optical power is detected by a photo detector, usually a PIN or avalanche photodiode (APD). A PIN or APD is an amplitude modulation envelope photo detector, insensitive to phase or small changes in wavelength. It generates an electrical output that reproduces the envelope of the received optical signal (Li, 2000). The most widely deployed photodiode for all lightwave applications is the PIN photodiode where its performance and characteristics are well understood and documented (Campbell, 1995).

Item Type: Book Section
Subjects: Q Science > Q Science (General) > Q179.9-180 Research
Divisions: Koleksi Penganjuran Persidangan (Conference Collection) > Annual Seminar National Science Fellowship (NSF)
Depositing User: Puan Sukmawati Muhamad
Date Deposited: 20 Feb 2019 01:14
Last Modified: 20 Feb 2019 01:14

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