Simulation Of Short Channel Vertical Mosfet Structures

Ooi , Poh Kok (2010) Simulation Of Short Channel Vertical Mosfet Structures. Masters thesis, Universiti Sains Malaysia.

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Abstract

Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done on the VMOST structures to mature as that of planar CMOS technologies. It is well known that there are many parameters needed to be considered in designing MOSFET. With the aid of computer-aided design, we can optimize the MOSFET parameters faster and with lower cost.

Item Type:	Thesis (Masters)
Subjects:	Q Science > QC Physics > QC1 Physics (General)
Divisions:	Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User:	ASM Ab Shukor Mustapa
Date Deposited:	03 Oct 2018 07:59
Last Modified:	12 Apr 2019 05:26
URI:	http://eprints.usm.my/id/eprint/42269

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