Study Of Ge And Geo2 Low Dimensional Structures Synthesized By Electrochemical Deposition For Sensing Applications

Jawad, Mohammed J. (2015) Study Of Ge And Geo2 Low Dimensional Structures Synthesized By Electrochemical Deposition For Sensing Applications. ["eprint_fieldopt_thesis_type_phd" not defined] thesis, Universiti Sains Malaysia.

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Abstract

Projek ini mencadangkan satu cara alternatif untuk menyediakan struktur mikro-Ge dan GeO2 tanpa pemangkin dan berkos rendah dengan menggunakan teknik pemendapan elektrokimia (ECD). Pertama sekali, struktur mikro Ge telah disintesis di atas substrat Si dengan mengenakan ketumpatan arus yang berbeza dari 2 ke 7.5 mA/cm2. Bentuk morfologi Ge yang dihasilkan menunjukkan pergantungan yang tinggi terhadap ketumpatan arus. Purata saiz kristal dan terikan telah meningkat dengan peningkatan ketumpatan arus. Kesan jangka masa yang berbeza (0.5, 1, 1.5 dan 2 h) ke atas ciri morfologi, struktur dan optik rod mikro kubus Ge yang ditumbuhkan di atas Si telah dikaji. Diperhatikan bahawa ketebalan lapisan Ge meningkat sehingga 3 μm dalam tempoh 2 jam. Perbandingan juga telah dilakukan ke atas struktur mikro Ge yang disintesiskan di atas substrat silikon berlian (PS) dan Si. Hasil kajian menunjukkan bahawa terikan elastik filem Ge pada PS adalah lebih rendah daripada filem Ge pada substrat Si. The project proposed an alternative way for preparing Ge and GeO2 nanostructures without catalyst and low cost by using electrochemical deposition (ECD) technique. Firstly Ge microstructures were synthesized on Si at different applied current densities which were varied from 2 to 7.5 mA/cm2. The morphologies of Ge showed strong dependence on the applied current density. The average crystal size and the strain were increased with increasing of the current density. The effect of different deposition durations of 0.5, 1, 1.5 and 2 h on the morphological, structural and optical properties of Ge cubic microrods growth on Si was investigated. It was observed that the thickness of Ge layer increased up to 3 μm within duration of 2 h. A comparison between Ge microstructures synthesized on porous silicon (PS) and Si substrates was performed. The results showed that the elastic strain of Ge films grown on PS was lower than that grown on Si substrate.

Item Type: Thesis (["eprint_fieldopt_thesis_type_phd" not defined])
Subjects: Q Science > QC Physics > QC1 Physics (General)
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User: HJ Hazwani Jamaluddin
Date Deposited: 03 Mar 2017 08:09
Last Modified: 17 May 2018 03:12
URI: http://eprints.usm.my/id/eprint/32299

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