Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]

Lim, Alex Ying Kiat (2004) Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]. Masters thesis, Universiti Sains Malaysia.

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    Abstract

    Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future chip fabrication.

    Item Type: Thesis (Masters)
    Subjects: Q Science > QC Physics > QC501-766 Electricity and magnetism
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: ARKM Al Rashid Automasi
    Date Deposited: 09 Oct 2008 08:48
    Last Modified: 13 Jul 2013 08:59
    URI: http://eprints.usm.my/id/eprint/3087

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