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Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]

Lim, Alex Ying Kiat (2004) Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]. Masters thesis, Universiti Sains Malaysia.

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Abstract

Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future chip fabrication.

Item Type:Thesis (Masters)
Subjects:Q Science > QC Physics > QC501-766 Electricity and magnetism
ID Code:3087
Deposited By:ARKM Al Rashid Automasi
Deposited On:09 Oct 2008 08:48
Last Modified:09 Oct 2008 08:48

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