Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour

Banu , Poobalan (2014) Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour. PhD thesis, Universiti Sains Malaysia.

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Abstract

The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/cm2) melalui kaedah pengoksidaan terma adalah sangat penting bagi aplikasi peranti kuasa tinggi (> 600 V).

Item Type:	Thesis (PhD)
Subjects:	T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
Divisions:	Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering) > Thesis
Depositing User:	Administrator Automasi
Date Deposited:	08 Jun 2015 06:52
Last Modified:	12 Apr 2019 05:26
URI:	http://eprints.usm.my/id/eprint/29000

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