Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.

Abdullah, A. Makarimi and Hutagalung, Sabar D. and Lockman, Zainovia (2010) Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. In: Proceedings of the International Conference on Nanotechnology: Fundamentals and Applications , 4-6 August 2010, Ottawa, Ontario, Canada.

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Abstract

Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
ID Code:	19500
Deposited By:	Mr Erwan Roslan
Deposited On:	04 Oct 2010 07:45
Last Modified:	04 Oct 2010 07:45

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