Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.

Abdullah, A. Makarimi and Hutagalung, Sabar D. and Lockman, Zainovia (2010) Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. In: Proceedings of the International Conference on Nanotechnology: Fundamentals and Applications , 4-6 August 2010, Ottawa, Ontario, Canada.

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    Abstract

    Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.

    Item Type: Conference or Workshop Item (Paper)
    Subjects: T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
    Divisions: Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 04 Oct 2010 07:45
    Last Modified: 13 Jul 2013 15:27
    URI: http://eprints.usm.my/id/eprint/19500

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