Abdullah, A. Makarimi and Hutagalung, Sabar D. and Lockman, Zainovia (2010) Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. In: Proceedings of the International Conference on Nanotechnology: Fundamentals and Applications , 4-6 August 2010, Ottawa, Ontario, Canada.
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Abstract
Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy |
| Divisions: | Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering) > Thesis |
| Depositing User: | Mr Erwan Roslan |
| Date Deposited: | 03 Oct 2010 23:45 |
| Last Modified: | 15 May 2017 08:10 |
| URI: | http://eprints.usm.my/id/eprint/19500 |
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