Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

L, S Chuah and Hassan, Z. and Abu Hassan, H (2007) Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.

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    Abstract

    The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature.

    Item Type: Conference or Workshop Item (Paper)
    Subjects: Q Science > QC Physics > QC1 Physics (General)
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 20 Nov 2009 09:56
    Last Modified: 13 Jul 2013 13:44
    URI: http://eprints.usm.my/id/eprint/14829

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