Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.

Jo, Lene Tan and Kuan, Yew Cheong and Rusli, Rusli (2007) Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan.

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    Abstract

    The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3].

    Item Type: Conference or Workshop Item (Paper)
    Subjects: T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
    Divisions: Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 29 Oct 2009 11:38
    Last Modified: 13 Jul 2013 13:21
    URI: http://eprints.usm.my/id/eprint/13614

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