Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.
Jo, Lene Tan and Kuan , Yew Cheong and Rusli, Rusli (2007) Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan.
The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3].
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