Login | Create Account
   

Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.

Jo, Lene Tan and Kuan , Yew Cheong and Rusli, Rusli (2007) Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan.

[img]
Preview
PDF - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
31Kb

Abstract

The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3].

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
ID Code:13614
Deposited By:Mr Erwan Roslan
Deposited On:29 Oct 2009 11:38
Last Modified:29 Oct 2009 11:38

Repository Staff Only: item control page

USM is powered by EPrints 3 which is developed by the School of Electronics and Computer Science at the University of Southampton. More information and software credits.
Share