Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
Jeong , Hyun Moon and Kuan , Yew Cheong and Ho , Keun Song and Jeong , Hyuk Yim and Myeong , Suk Oh and Jong , Ho Lee and Bahng, Wook and Nam, Kyun Kim and Hyeong, Joon Kim (2007) Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC. In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan.
Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications.
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