Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.

Jeong, Hyun Moon and Kuan, Yew Cheong and Ho, Keun Song and Jeong, Hyuk Yim and Myeong, Suk Oh and Jong, Ho Lee and Bahng, Wook and Nam, Kyun Kim and Hyeong, Joon Kim (2007) Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC. In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan.

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Abstract

Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
Divisions:	Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering)
Depositing User:	Mr Erwan Roslan
Date Deposited:	29 Oct 2009 03:27
Last Modified:	13 Jul 2013 05:21
URI:	http://eprints.usm.my/id/eprint/13610

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