Jeong, Hyun Moon and Kuan, Yew Cheong and Ho, Keun Song and Jeong, Hyuk Yim and Myeong, Suk Oh and Jong, Ho Lee and Bahng, Wook and Nam, Kyun Kim and Hyeong, Joon Kim
(2007)
Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan.
Abstract
Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications.
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