A Comparative Study Of The Electrical Characteristics Of Metal-Semiconductor-Metal (MSM) Photodiodes Based On Gan Grown On Silicon.

Y, C.Lee and Z., Hassan and F., K. Yam and Abdullah, M. J. and Ibrahim, K. A Comparative Study Of The Electrical Characteristics Of Metal-Semiconductor-Metal (MSM) Photodiodes Based On Gan Grown On Silicon. Working Paper. Universiti Sains Malaysia .

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    Abstract

    High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC). Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.

    Item Type: Monograph (Working Paper)
    Subjects: Q Science > QC Physics > QC1-999 Physics
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 30 Jun 2009 09:14
    Last Modified: 13 Jul 2013 12:30
    URI: http://eprints.usm.my/id/eprint/10768

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