A Comparative Study Of The Electrical Characteristics Of Metal-Semiconductor-Metal (MSM) Photodiodes Based On Gan Grown On Silicon.

Y, C.Lee and Z. , Hassan and F. , K. Yam and Abdullah, M. J. and Ibrahim, K. A Comparative Study Of The Electrical Characteristics Of Metal-Semiconductor-Metal (MSM) Photodiodes Based On Gan Grown On Silicon. Working Paper. Universiti Sains Malaysia .

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Abstract

High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC). Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.

Item Type:	Monograph (Working Paper)
Subjects:	Q Science > QC Physics > QC1-999 Physics
ID Code:	10768
Deposited By:	Mr Erwan Roslan
Deposited On:	30 Jun 2009 09:14
Last Modified:	30 Jun 2009 09:14

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