Y, C.Lee and Z., Hassan and F., K. Yam and Abdullah, M. J. and Ibrahim, K. A Comparative Study Of The Electrical Characteristics Of Metal-Semiconductor-Metal (MSM) Photodiodes Based On Gan Grown On Silicon. Working Paper. Universiti Sains Malaysia .
High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC). Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.
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