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Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].

Thahab, Sabah Mresn (2008) Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb]. PhD thesis, Universiti Sains Malaysia.

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Abstract

Simulasi peranti bagi ciri elektrik, optik dan terma diod-diod laser (LDs) berasaskan GaN telah dikaji. Bagi laser-laser sedemikian adalah susah memperolehi lapisan penutup-p yang mempunyai ketebalan yang mencukupi, Device simulations for the electrical, optical and thermal characteristics of GaN-based laser diodes (LDs) have been investigated. It is difficult to obtain pcladding layers with sufficient thickness of high Al composition and high acceptor concentration,

Item Type:Thesis (PhD)
Subjects:Q Science > QC Physics > QC1-999 Physics
ID Code:10397
Deposited By:MHAH Hazlee Abdul Halil
Deposited On:04 Jun 2009 10:25
Last Modified:04 Jun 2009 10:25

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