Items where Author is "Samsudin, M. E. A."

Samsudin, M. E. A. and Yusuf, Y. and Zollner, C. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2020) Effect Of Nucleation Time With TMAl Preflow Assistance On Reducing Dislocation Density Of Aln Layer For. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

Samsudin, M. E. A. and Yusuf, Y. and Zollner, C. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2020) Effect Of Nucleation Time With Tmal Preflow Assistance On Reducing Dislocation Density Of Aln Layer For AlGaN-Based UVC LED. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020).

Alias, E. A. and Samsudin, M. E. A. and Zainal, N. and Iza, M. and Hassan, Abdullah I. and Denbaars, S. P. and Speck, J. S. and Nakamura, S. (2019) Comparison Between Vertical-Stand Packaging And Planar-Mounted Packaging For Gan On Gan Led. In: International Conference On Semiconductor Materials Technology.

Samsudin, M. E. A. and Alias, E. A. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2019) Efficiency Droop Of InGaN/GaN Led With Different Indium Composition. In: International Conference On Semiconductor Materials Technology.

Sahar, Mohd Ann Amirul Zulffiqal Md and Hassan, Zainuriah and Way, Foong Lim and Samsudin, M. E. A. and Hanafiah, A. M. and Yusuf, Yusnizam and Ahmad, M. A. and Hamzah, Nur Atiqah and Asri, Rahil Izzati Mohd (2019) The Growth Of Aln Single Layer On Sapphire At Low Pressure Using Metalorganic Chemical Vapor Deposition (MOCVD). In: International Conference On Semiconductor Materials Technology.

Samsudin, M. E. A. and Zainal, N. and Hassan, Z. (2015) Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).