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Items where Author is "Nakamura, S."
Group by: Item Type | No Grouping Jump to: Conference or Workshop Item Number of items: 5. Conference or Workshop ItemSamsudin, M. E. A. and Yusuf, Y. and Zollner, C. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2020) Effect Of Nucleation Time With TMAl Preflow Assistance On Reducing Dislocation Density Of Aln Layer For. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020. Samsudin, M. E. A. and Yusuf, Y. and Zollner, C. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2020) Effect Of Nucleation Time With Tmal Preflow Assistance On Reducing Dislocation Density Of Aln Layer For AlGaN-Based UVC LED. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020). Zainal, N. and Alhassan, Abdullah I. and Nakamura, S. and Denbaars, S. P. and Speck, J. S. (2019) Characteristics Of InGaN Based Red Led Epiwafer. In: International Conference On Semiconductor Materials Technology. Alias, E. A. and Samsudin, M. E. A. and Zainal, N. and Iza, M. and Hassan, Abdullah I. and Denbaars, S. P. and Speck, J. S. and Nakamura, S. (2019) Comparison Between Vertical-Stand Packaging And Planar-Mounted Packaging For Gan On Gan Led. In: International Conference On Semiconductor Materials Technology. Samsudin, M. E. A. and Alias, E. A. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2019) Efficiency Droop Of InGaN/GaN Led With Different Indium Composition. In: International Conference On Semiconductor Materials Technology. |
