Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].

Tan, Philip Beow Yew (2008) Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. PhD thesis, Universiti Sains Malaysia.

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    Abstract

    Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physical-based model of Shallow Trench Isolation (STI) mechanical stress effect on deep submicron CMOS transistor.

    Item Type: Thesis (PhD)
    Subjects: T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK7800-8360 Electronics
    Divisions: Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraaan Elektrik & Elektronik (School of Electrical & Electronic Engineering)
    Depositing User: MHAH Hazlee Abdul Halil
    Date Deposited: 28 Apr 2009 10:51
    Last Modified: 13 Jul 2013 12:11
    URI: http://eprints.usm.my/id/eprint/9583

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