The Study Of Gan Materials For Device Applications [QD181.N1 Y19 2007 f rb].

Yam, Fong Kwong (2007) The Study Of Gan Materials For Device Applications [QD181.N1 Y19 2007 f rb]. PhD thesis, Universiti Sains Malaysia.

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    Abstract

    Dalam projek ini, tumpuan kerja adalah pada kajian kualiti bahan GaN yang ditumbuh oleh teknik-teknik yang berlainan, sentuhan logam pada bahan-bahan GaN dan juga kajian pada sifat-sifat asas bahan GaN berliang, serta fabrikasi peranti berasaskan bahan GaN berliang. In this project, works are focusing on the investigation of the material quality grown by different techniques, metal contacts on GaN materials as well as the study of the fundamental properties of the porous GaN materials and the fabrication of devices based on porous GaN materials.

    Item Type: Thesis (PhD)
    Subjects: Q Science > QD Chemistry > QD146-197 Inorganic chemistry
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 28 Apr 2009 08:45
    Last Modified: 13 Jul 2013 12:11
    URI: http://eprints.usm.my/id/eprint/9580

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