Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb].

Omer Hudeish, Abdo Yahya (2005) Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb]. PhD thesis, Universiti Sains Malaysia.

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Abstract

Dalam kajian ini, Pt, Pd, Ag dan Ni dimendapkan ke atas GaN dan AlGaN jenis p dan jenis n sebagai sentuhan logam mangkinan dengan menggunakan sistem percikan menerusi topeng logam bagi mengesan gas N2, H2 dan CH4 dengan kepekatan dan ketebalan logam yang berbeza dalam julat dari 50 hinga 300nm. Kemudian, sampel diberi terma yang berbeza dari 500-1000oC selama 5 minit dalam gas argon bagi ciri pengesanan. In this work, Pt, Pd, Ag and Ni were deposited on p type and n type of GaN and AlGaN as catalytic metals contact using sputtering system through metal mask to detect N2, H2 and CH4 gases with different concentrations and different metal thicknesses with a range of 50-300nm. Samples were annealed at various temperatures from 500°C up to 1000°C for 5 min in argon prior to sensing charactersation.

Item Type:	Thesis (PhD)
Subjects:	T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK7800-8360 Electronics
Divisions:	Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User:	ARKM Al Rashid Automasi
Date Deposited:	25 Mar 2009 07:43
Last Modified:	22 Mar 2017 02:23
URI:	http://eprints.usm.my/id/eprint/8635

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