Tan, Aik Kwan (2025) Growth Of Indium Gallium Nitride By Metalorganic Chemical Vapor Deposition And Simulation For Solar Cell Application. PhD thesis, Perpustakaan Hamzah Sendut.
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Abstract
Indium gallium nitride (ingan) is widely used for various optoelectronic applications due to its unique properties, such as a direct and tunable bandgap from 0.64 ev to 3.42 ev by varying the indium composition. However, the development of ingan-based devices encountered difficulty in growing indium-rich and highcrystalline quality ingan thin film as well as p-type ingan thin film. In this study, the key focus will be the metalorganic chemical vapor deposition (mocvd) growth of indium-rich (> 20%) ingan thin film with good crystalline quality (fwhm < 2000) and the optimization of annealing conditions for the magnesium (mg) doped ingan thin film for the p-type behaviour. By optimizing the growth temperatures and v/iii ratios, a 300 nm ingan thin film with a maximum indium composition of 21.18% was successfully grown and the best sample showed good crystalline quality with fullwidth- at-half-maximum (fwhm) of 1975 and 1746 for (0 0 0 2) and (1 0 -1 5) diffraction peaks, respectively at the v/iii ratio of 16562. Annealing temperature of 650°c to the mg-doped ingan thin films showed the lowest bulk resistivity and dislocation densities as compared with other annealing temperatures.
| Item Type: | Thesis (PhD) |
|---|---|
| Subjects: | Q Science > QC Physics > QC1 Physics (General) |
| Divisions: | Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Thesis |
| Depositing User: | Mr Hasmizar Mansor |
| Date Deposited: | 09 Jul 2026 04:38 |
| Last Modified: | 09 Jul 2026 07:31 |
| URI: | http://eprints.usm.my/id/eprint/64567 |
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