Electrical Characteristics And Thermal Stability Of Ti Contact To p-Gan.

Tan, C.K. and Abdul Aziz, A. and Hassan, Z. and Tam, F.K. and Hudeish, A.Y. (2005) Electrical Characteristics And Thermal Stability Of Ti Contact To p-Gan. In: 6th International Conference On Nitride Semiconductors, 28 Aug - 2Sept 2005, Brennex,Germany. (Submitted)

[img]
Preview
PDF
Download (385Kb) | Preview

    Abstract

    Wide band gap GaN semiconductor has a variety of applications in optoelectronic devices such as lightemitting diodes and laser diodes.

    Item Type: Conference or Workshop Item (Paper)
    Subjects: T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: ARKM Al Rashid Automasi
    Date Deposited: 11 Nov 2008 14:31
    Last Modified: 13 Jul 2013 11:15
    URI: http://eprints.usm.my/id/eprint/5558

    Actions (login required)

    View Item
    Share