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Electrical Characteristics And Thermal Stability Of Ti Contact To p-Gan.

Tan, C.K. and Abdul Aziz, A. and Hassan, Z. and Tam, F.K. and Hudeish, A.Y. (2005) Electrical Characteristics And Thermal Stability Of Ti Contact To p-Gan. In: 6th International Conference On Nitride Semiconductors, 28 Aug - 2Sept 2005, Brennex,Germany. (Submitted)

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Abstract

Wide band gap GaN semiconductor has a variety of applications in optoelectronic devices such as lightemitting diodes and laser diodes.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering
ID Code:5558
Deposited By:ARKM Al Rashid Automasi
Deposited On:11 Nov 2008 14:31
Last Modified:11 Nov 2008 14:31

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