Electrical Characteristics And Thermal Stability Of Ti Contact To p-Gan.

Tan, C.K. and Abdul Aziz, A. and Hassan, Z. and Tam, F.K. and Hudeish, A.Y. (2005) Electrical Characteristics And Thermal Stability Of Ti Contact To p-Gan. In: 6th International Conference On Nitride Semiconductors, 28 Aug - 2Sept 2005, Brennex,Germany. (Submitted)

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Abstract

Wide band gap GaN semiconductor has a variety of applications in optoelectronic devices such as lightemitting diodes and laser diodes.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical Engineering. Electronics. Nuclear Engineering > TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Divisions: Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraaan Elektrik & Elektronik (School of Electrical & Electronic Engineering) > Conference or Workshop Item
Depositing User: ARKM Al Rashid Automasi
Date Deposited: 11 Nov 2008 06:31
Last Modified: 20 Nov 2017 07:22
URI: http://eprints.usm.my/id/eprint/5558

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